Selecting read voltage using write transaction data

ABSTRACT

A system includes a memory component; and a processing device, operatively coupled with the memory component. The processing device is to receive a request to perform a read operation on data stored at a physical address of the memory component and determine whether the data satisfies a threshold criterion pertaining to when the data was written to the physical address. In response to the data satisfying the threshold criterion, the processing device is to perform the read operation on the data stored at the physical address using a first read voltage level, and in response to the data not satisfying the threshold criterion, perform the read operation on the data stored at the physical address using a second read voltage level.

TECHNICAL FIELD

Embodiments of the disclosure relate generally to memory sub-systems,and more specifically, relate to selecting a read voltage using writetransaction data.

BACKGROUND

A memory sub-system can be a storage system, a memory module, or ahybrid of a storage device and memory module. The memory sub-system caninclude one or more memory components that store data. The memorycomponents can be, for example, non-volatile memory components andvolatile memory components. In general, a host system can utilize amemory sub-system to store data at the memory components and to retrievedata from the memory components.

BRIEF DESCRIPTION OF THE DRAWINGS

The present disclosure will be understood more fully from the detaileddescription given below and from the accompanying drawings of variousembodiments of the disclosure.

FIG. 1 illustrates an example computing environment that includes amemory sub-system in accordance with some embodiments of the presentdisclosure.

FIG. 2 is a flow diagram of an example method to select a read voltageusing write transaction data in accordance with some embodiments of thepresent disclosure.

FIG. 3 is a graph that illustrates the bit error rate as a function ofwrite-to-read delay for three read voltage levels in accordance withsome embodiments of the present disclosure.

FIG. 4 is a block diagram illustrating an example data flow to select aread voltage using a write transaction catalog in accordance with someembodiments of the present disclosure.

FIG. 5 is a flow diagram of an example method to select a read voltageusing a write transaction catalog in accordance with some embodiments ofthe present disclosure.

FIG. 6A illustrates an example write transaction catalog according tosome embodiments of the present disclosure.

FIG. 6B illustrates an example write transaction catalog according tosome embodiments of the present disclosure.

FIG. 7 is a block diagram of an example computer system in whichembodiments of the present disclosure may operate.

DETAILED DESCRIPTION

Aspects of the present disclosure are directed to selecting a readvoltage using write transaction data. A memory sub-system can be astorage device, a memory module, or a hybrid of a storage device andmemory module. Examples of storage devices and memory modules aredescribed below in conjunction with FIG. 1. In general, a host systemcan utilize a memory sub-system that includes one or more memorycomponents, such as non-volatile memory devices. The host system canprovide data to be stored at the memory sub-system and can request datato be retrieved from the memory sub-system.

A bit error rate (BER) for certain memory device types (i.e., for memorysub-systems employing certain types of memory devices), can vary overtime. The BER can be the number of bit errors detected per unit of timethat the data stored at a data block experiences. In particular, somenon-volatile memory devices (e.g., NAND, phase change, etc.) havethreshold voltage (Vt) distributions that move as a function of time. Ata given read level (i.e., the voltage applied to a memory cell as partof a read operation), if the Vt distributions move, then the BER canalso be affected. For any Vt distribution at an instance in time, therecan an optimal read level (or read level range) that minimizes theexpected BER. In particular, for some types of memory devices, the Vtdistribution and BER can be a function of write-to-read (W2R) delay(i.e., the period of time that passes between when data is written to amemory device and when the data is read from the memory device). Due tothis time-varying nature of BER, as well as other noise mechanisms inmemory, a single read level may not be sufficient to achieve an errorrate that satisfies certain system reliability targets. Thus, certainmemory sub-systems may have a number of pre-programmed read voltagelevels, each corresponding to a different range of W2R delay times. Forexample, a lowest read voltage can be most advantageous (lowest BER) touse for very small write to read delays, a second higher read voltagecan have the lowest BER for data with a W2R delay that is slightlylarger, and a third read voltage can have the lowest BER for data with aW2R delay that is very large.

A conventional memory sub-system can read data from non-volatile memory,selecting the lowest read voltage level first to attempt to read thedata. If a read error occurs when using the lowest read voltage level,then the next highest read voltage level is selected to attempt to readthe data. Again, if a read error occurs, then another higher readvoltage level is used to read the data. Beginning with the lowest readvoltage, and then progressing to higher read voltages helps to preventcorruptive reads and partial writes caused by applying a read voltagethat is too high. This technique, however, can reduce system performanceby increasing latency of memory read access since all three voltagelevels are typically tried before getting to a correct read voltage fordata with a large write to read delay.

Aspects of the present disclosure address the above and otherdeficiencies by using write transaction data to select an appropriateread voltage level to use. The memory sub-system can include a writetransaction catalog, which is a data structure that includes entriesthat store write transaction data, such as the physical addressesassociated with write transactions that have occurred within aparticular range of W2R delay. When a request to perform a readoperation is received, the memory sub-system can examine the writetransaction catalog for an entry corresponding to the physical addresson which the read operation is to be performed. If the physical addressis in the write transaction catalog, then a range of W2R delay can bedetermined for the data at the physical address. A read voltage levelcan then be selected based on the W2R delay of the data at the physicaladdress.

In one example, a physical address associated with a write transactionis recorded in the write transaction catalog. Upon receiving a requestto read data stored at the physical address, if the physical address isrecorded in the write transaction catalog then a first read voltagelevel is selected to read the data at the physical address. If thephysical address is not recorded in the write transaction catalog then asecond read voltage is selected. In another example, upon receiving arequest to perform a write transaction, a physical address associatedwith the write transaction is recorded in the write transaction catalogalong with a time stamp of when the write transaction occurred. Thenupon receiving a request to read the data at the physical address, thewrite transaction catalog is searched. If the physical address is foundin the write transaction catalog, a difference between the time stampstored with the physical address and the current read request isdetermined. If the difference (i.e. the W2R delay) is less than athreshold write to read delay then the first read voltage is selected,otherwise the second read voltage is selected. It should be noted thatany number of threshold write to read delays can be used to select anynumber of read voltages. For example, more than one threshold write toread delay can be used to select between three or more read voltages.

Thus, the present disclosure provides advantages over conventionalsystems by selecting a read voltage using a write transaction catalog.The read-retry trigger rate is reduced which can improve overall systemthroughput and reduce latency. Additionally, partial write effects canbe reduced or eliminated thus ensuring that the system continues to meetthe reliability requirements of the host system.

FIG. 1 illustrates an example computing environment 100 that includes amemory sub-system 110 in accordance with some embodiments of the presentdisclosure. The memory sub-system 110 can include media, such as memorycomponents 112A to 112N. The memory components 112A to 112N can bevolatile memory components, non-volatile memory components, or acombination of such. A memory sub-system 110 can be a storage device, amemory module, or a hybrid of a storage device and memory module.Examples of a storage device include a solid-state drive (SSD), a flashdrive, a universal serial bus (USB) flash drive, an embedded Multi-MediaController (eMMC) drive, a Universal Flash Storage (UFS) drive, and ahard disk drive (HDD). Examples of memory modules include a dual in-linememory module (DIMM), a small outline DIMM (SO-DIMM), and a non-volatiledual in-line memory module (NVDIMM).

The computing environment 100 can include a host system 120 that iscoupled to one or more memory sub-systems 110. In some embodiments, thehost system 120 is coupled to different types of memory sub-system 110.FIG. 1 illustrates one example of a host system 120 coupled to onememory sub-system 110. The host system 120 uses the memory sub-system110, for example, to write data to the memory sub-system 110 and readdata from the memory sub-system 110. As used herein, “coupled to”generally refers to a connection between components, which can be anindirect communicative connection or direct communicative connection(e.g., without intervening components), whether wired or wireless,including connections such as electrical, optical, magnetic, etc.

The host system 120 can be a computing device such as a desktopcomputer, laptop computer, network server, mobile device, embeddedcomputer (e.g., one included in a vehicle, industrial equipment, or anetworked commercial device), or such computing device that includes amemory and a processing device. The host system 120 can include or becoupled to the memory sub-system 110 so that the host system 120 canread data from or write data to the memory sub-system 110. The hostsystem 120 can be coupled to the memory sub-system 110 via a physicalhost interface. Examples of a physical host interface include, but arenot limited to, a serial advanced technology attachment (SATA)interface, a peripheral component interconnect express (PCIe) interface,universal serial bus (USB) interface, Fibre Channel, Serial AttachedSCSI (SAS), etc. The physical host interface can be used to transmitdata between the host system 120 and the memory sub-system 110. The hostsystem 120 can further utilize an NVM Express (NVMe) interface to accessthe memory components 112A to 112N when the memory sub-system 110 iscoupled with the host system 120 by the PCIe interface. The physicalhost interface can provide an interface for passing control, address,data, and other signals between the memory sub-system 110 and the hostsystem 120.

The memory components 112A to 112N can include any combination of thedifferent types of non-volatile memory components and/or volatile memorycomponents. An example of non-volatile memory components includes anegative-and (NAND) type flash memory. Each of the memory components112A to 112N can include one or more arrays of memory cells such assingle level cells (SLCs) or multi-level cells (MLCs) (e.g., triplelevel cells (TLCs) or quad-level cells (QLCs)). In some embodiments, aparticular memory component can include both an SLC portion and a MLCportion of memory cells. Each of the memory cells can store one or morebits of data (e.g., data blocks) used by the host system 120. Althoughnon-volatile memory components such as NAND type flash memory aredescribed, the memory components 112A to 112N can be based on any othertype of memory such as a volatile memory. In some embodiments, thememory components 112A to 112N can be, but are not limited to, randomaccess memory (RAM), read-only memory (ROM), dynamic random accessmemory (DRAM), synchronous dynamic random access memory (SDRAM), phasechange memory (PCM), magneto random access memory (MRAM), negative-or(NOR) flash memory, electrically erasable programmable read-only memory(EEPROM), and a cross-point array of non-volatile memory cells. Across-point array of non-volatile memory can perform bit storage basedon a change of bulk resistance, in conjunction with a stackablecross-gridded data access array. Additionally, in contrast to manyflash-based memories, cross-point non-volatile memory can perform awrite in-place operation, where a non-volatile memory cell can beprogrammed without the non-volatile memory cell being previously erased.Furthermore, the memory cells of the memory components 112A to 112N canbe grouped as memory pages or data blocks that can refer to a unit ofthe memory component used to store data.

The memory system controller 115 (hereinafter referred to as“controller”) can communicate with the memory components 112A to 112N toperform operations such as reading data, writing data, or erasing dataat the memory components 112A to 112N and other such operations. Thecontroller 115 can include hardware such as one or more integratedcircuits and/or discrete components, a buffer memory, or a combinationthereof. The controller 115 can be a microcontroller, special purposelogic circuitry (e.g., a field programmable gate array (FPGA), anapplication specific integrated circuit (ASIC), etc.), or other suitableprocessor. The controller 115 can include a processor (processingdevice) 117 configured to execute instructions stored in local memory119. In the illustrated example, the local memory 119 of the controller115 includes an embedded memory configured to store instructions forperforming various processes, operations, logic flows, and routines thatcontrol operation of the memory sub-system 110, including handlingcommunications between the memory sub-system 110 and the host system120. In some embodiments, the local memory 119 can include memoryregisters storing memory pointers, fetched data, etc. The local memory119 can also include read-only memory (ROM) for storing micro-code.While the example memory sub-system 110 in FIG. 1 has been illustratedas including the controller 115, in another embodiment of the presentdisclosure, a memory sub-system 110 may not include a controller 115,and may instead rely upon external control (e.g., provided by anexternal host, or by a processor or controller separate from the memorysub-system).

In general, the controller 115 can receive commands or operations fromthe host system 120 and can convert the commands or operations intoinstructions or appropriate commands to achieve the desired access tothe memory components 112A to 112N. The controller 115 can beresponsible for other operations such as wear leveling operations,garbage collection operations, error detection and error-correcting code(ECC) operations, encryption operations, caching operations, and addresstranslations between a logical block address and a physical blockaddress that are associated with the memory components 112A to 112N. Thecontroller 115 can further include host interface circuitry tocommunicate with the host system 120 via the physical host interface.The host interface circuitry can convert the commands received from thehost system into command instructions to access the memory components112A to 112N as well as convert responses associated with the memorycomponents 112A to 112N into information for the host system 120.

The memory sub-system 110 can also include additional circuitry orcomponents that are not illustrated. In some embodiments, the memorysub-system 110 can include a cache or buffer (e.g., DRAM) and addresscircuitry (e.g., a row decoder and a column decoder) that can receive anaddress from the controller 115 and decode the address to access thememory components 112A to 112N.

The memory sub-system 110 includes a read voltage selection component113 that can select a read voltage level for a read operation using awrite transaction catalog. In some embodiments, the controller 115includes at least a portion of the read voltage selection component 113.For example, the controller 115 can include a processor 117 (processingdevice) configured to execute instructions stored in local memory 119for performing the operations described herein. In some embodiments, theread voltage selection component 113 is part of the host system 120, anapplication, or an operating system.

The write transaction catalog is a data structure that includes entriesthat store write transaction data, such as the physical addressesassociated with write transactions that have occurred within aparticular range of W2R delay. The write transaction catalog can be, forexample and not limited to, a table or a list. The memory sub-system canperform a lookup operation or a search operation on the writetransaction catalog.

The read voltage selection component 113 can search a write transactioncatalog for a physical address, or an indication of a physical address,stored in the write transaction catalog. The read voltage selectioncomponent 113 can determine if data satisfies a threshold criterionbased on the result of the search of the write transaction catalog. Thethreshold criterion is satisfied if the data was written to the physicaladdress within a threshold period of time. In one embodiment, if thephysical address is stored in the write transaction catalog then thedata was written to the physical address within the threshold period oftime, and thus the threshold criterion may be met. In anotherembodiment, a time stamp stored with the physical address can indicatewhether or not the threshold criterion is satisfied depending on whetherdata was written to the physical address within the threshold period oftime. The read voltage selection component 113 can select a read voltageto read the data at the physical address based on whether the physicaladdress was written to within the threshold period of time. Furtherdetails with regards to the operations of the read voltage selectioncomponent 113 are described below.

FIG. 2 is a flow diagram of an example method 200 to select a readvoltage using a write transaction catalog, in accordance with someembodiments of the present disclosure. The method 200 can be performedby processing logic that can include hardware (e.g., processing device,circuitry, dedicated logic, programmable logic, microcode, hardware of adevice, integrated circuit, etc.), software (e.g., instructions run orexecuted on a processing device), or a combination thereof. In someembodiments, the method 200 is performed by the read voltage selectioncomponent 113 of FIG. 1. Although shown in a particular sequence ororder, unless otherwise specified, the order of the processes can bemodified. Thus, the illustrated embodiments should be understood only asexamples, and the illustrated processes can be performed in a differentorder, and some processes can be performed in parallel. Additionally,one or more processes can be omitted in various embodiments. Thus, notall processes are required in every embodiment. Other process flows arepossible.

At operation 210, the processing logic receives a read request to readdata stored at a physical address of a memory component (e.g., one ofmemory components 112A-112N). The read request can include an indicatorof the physical address of the memory component to be read. Theindicator of the physical address can be a representation of thephysical address such as a numerical notation or any other indicator ofa physical address of a memory component. The data stored at thephysical address can be written at a previous time at which theindicator of the physical address can be recorded in a buffer, referredto as a write transaction catalog. The buffer can be a first-infirst-out memory buffer that stores indicators of recently writtenphysical addresses.

At operation 220, the processing logic determines whether the data atthe physical address satisfies a threshold criterion pertaining to whenthe data was written to the physical address. The threshold criterioncan be satisfied when the data was written within a threshold period oftime. When the time since the data was written exceeds the thresholdperiod of time the threshold criterion is not satisfied. The thresholdperiod of time can be a maximum W2R delay for which a first read voltagelevel can be used to accurately read the data. The threshold period oftime can depend on the memory sub-system and can be selected to providean optimal threshold at which to begin reading the data using a secondread voltage level, as shown in FIG. 3. FIG. 3 is a graph 300 thatillustrates the bit error rate (BER) as a function of write-to-read(W2R) delay for three read voltage levels in accordance with someembodiments of the present disclosure. As described herein, Vtdistributions can shift over time. For example, for a given read voltagelevel, such as a first read voltage level (labeled Read Level 1), if theVt distributions move, the bit error rate experienced when readoperations are performed using this read voltage level can change as afunction of time. In these or other situations, the Vt distribution andbit error rate can be a function of the W2R delay. In graph 300, themeasured BER is displayed for read operations performed using adesignated read voltage level. For example, BER curve 312 represents theBER measured for read operations performed using Read Level 1 onsegments of different W2R delay times, BER curve 322 represents the BERmeasured for read operations performed using Read Level 2 on segments ofdifferent W2R delay times, and BER curve 332 represents the BER measuredfor read operations performed using Read Level 3 on segments ofdifferent W2R delay times. Graph 300 shows that each of the three readvoltage levels minimize the BER within a different range of W2R delaytimes, such as W2R Range 310, W2R Range 320, and W2R Range 330. In otherembodiments, there may be any other number of ranges of W2R delay timesand associated read voltage levels. The values of Read Level 1, ReadLevel 2, and Read Level 3 may be set during production of the memorycomponent. The threshold period of time described with respect to FIG. 2can correspond to W2R Range 310 and the first read voltage level cancorrespond to Read Level 1. Alternatively, the threshold period of timecan be a time that extends beyond W2R Range 310.

Again referring to operation 220 of FIG. 2, the processing logic cansearch a write transaction catalog to determine if the catalog containsthe physical address from the read request. In one embodiment, if thephysical address is in the catalog then the physical address was lastwritten within the defined period of time (e.g. W2R Range 310), and thethreshold criterion is satisfied. If the physical address is not in thecatalog then the physical address was last written outside of thedefined period of time (e.g., W2R Range 320 or W2R Range 330), and thethreshold criterion is not satisfied. In another embodiment, if thephysical address is not in the write transaction catalog, then again thethreshold W2R delay is exceeded. However, if the physical address is inthe write transaction catalog then the processing logic can alsodetermine whether a time stamp associated with the physical addressindicates that the threshold period of time has passed since the data atthe physical address was written. The time stamp can be compared to acurrent time of the read operation to determine if the data at thephysical address was written within the threshold period of time.

At operation 230 of FIG. 2, in response to the data satisfying thethreshold criterion, the processing logic performs the read operation onthe data stored at the physical address using a first read voltagelevel. At operation 240, in response to the data not satisfying thethreshold criterion, the processing logic performs the read operation onthe data stored at the physical address using a second read voltagelevel. The second read voltage level can be higher than the first readvoltage level.

FIG. 4 illustrates a read voltage selection component 113 and a memory450. The read voltage selection component can include a search engine420, a write transaction catalog 430 and a read level selector 440. Thesearch engine 420 can be implemented in hardware as a hash,content-addressable memory, or any other hardware search scheme. Thesearch engine 420 can also be implemented, at least in part, bysoftware. The write transaction catalog 430 can store one or morephysical addresses of memory 450 to which data has been recentlywritten. Write transaction catalog 430 can also include a catalog entryupdate module 435 to update the write transaction catalog with newlyreceived physical addresses (e.g., physical address 414) and to removeold entries. The read level selector 440 may be hardware or softwarethat determines, based on the results of a search of the writetransaction catalog 430, which read voltage level to use on a firstattempt of a read operation.

For example, in one implementation, search engine 420 of the readvoltage selection component 113 receives a read request 402 from a hostsystem. The search engine 420 can then search the write transactioncatalog 430. The search engine 420 can search the one or more physicaladdresses stored in the write transaction catalog 430 and the results ofthe search can be forwarded to the read level selector 440. The readlevel selector 440 can select a read voltage level based on the resultof the search of the write transaction catalog 430. In one example, ifthe search engine 420 determines that a physical address that isreceived with the read request 402 is stored in the write transactioncatalog 430 then a first read voltage level is selected. If the physicaladdress is not stored in the write transaction catalog 430 then a secondread voltage level is selected. In another example, if the physicaladdress is in the write transaction catalog 430 then the read levelselector 440 can determine whether a time stamp stored with the physicaladdress in the write transaction catalog 430 indicates that a thresholdperiod of time has elapsed since data was written to the physicaladdress. If the threshold period of time has not elapsed then the firstread voltage level is selected. If the threshold period of time haselapsed then the second read voltage level is selected. After selectionof a read voltage level the read operation can be executed and returnthe read data 404 to the host system.

In another example, a physical address 414 of a write request 412 can bereceived at the catalog entry update module 435 of the write transactioncatalog 430. The write request 412 can include both the physical address414 and write data 416. The physical address 414 of the write request412 can be stored in the write transaction catalog 430 while the writedata 416 is stored at the physical address 414 in memory 450. In someembodiments, the catalog entry update module 435 records the physicaladdress 414 in the write transaction catalog 430 along with a time stampindicating when the write data 416 was written to memory 450. Thecatalog entry update module 435 can record the physical address 414, oran indicator of the physical address 414, in an entry of the writetransaction catalog 430 adjacent to an entry for the previous writeoperation. In some embodiments, the write request includes multiplephysical addresses 414 for the write data 416. Each physical address 414of the write data 416 can be recorded in the write transaction catalog430.

In one embodiment, the write transaction catalog 430 can be a first infirst out (FIFO) memory buffer. The catalog entry update module 435 canrecord the physical addresses in the write transaction catalog 430 witha time stamp and remove a previous entry of the write transactioncatalog each time a new physical address is recorded. The writetransaction catalog 430 can be a defined size and thus entries can beremoved, or overwritten, after a specific number of other physicaladdress have been recorded (i.e., when the buffer is full). In oneexample, the catalog entry update module 435 can remove the oldest entryof the write transaction catalog 430 each time a new write request isreceived and replace it with the newly received physical address.

Additionally, in some embodiments, the catalog entry update module 435can remove an entry from the write transaction catalog 430 at a constantinterval. Thus, the physical address 414 is stored in the writetransaction catalog 430 for the threshold amount of time (i.e. thethreshold W2R delay) and is then removed. For example, the catalog entryupdate module 435 can include a write pointer of the write transactioncatalog 430 that is incremented to the next entry position in the writetransaction catalog 430 at the constant interval. At each constantinterval an entry at the position indicated by the write pointer isremoved. In addition, if a write request is received during the intervalthen the removed entry can be replaced by the physical address for thenewly received write request. The write pointer is then incrementedwhether or not a write request is received. Therefore, in a writetransaction catalog 430 of a defined size, the physical address 414 canbe recorded without a time stamp.

FIG. 5 is a flow diagram of an example method 500 to select a readvoltage using a write transaction catalog, in accordance with someembodiments of the present disclosure. The method 500 can be performedby processing logic that can include hardware (e.g., processing device,circuitry, dedicated logic, programmable logic, microcode, hardware of adevice, integrated circuit, etc.), software (e.g., instructions run orexecuted on a processing device), or a combination thereof. In someembodiments, the method 500 is performed by the read voltage selectioncomponent 113 of FIG. 1. Although shown in a particular sequence ororder, unless otherwise specified, the order of the processes can bemodified. Thus, the illustrated embodiments should be understood only asexamples, and the illustrated processes can be performed in a differentorder, and some processes can be performed in parallel. Additionally,one or more processes can be omitted in various embodiments. Thus, notall processes are required in every embodiment. Other process flows arepossible.

At operation 510, the processing logic performs a write operation onmemory located at a physical address of a memory component. The writeoperation may include data to be written to the memory component and thephysical address. The physical address can be an indicator of thephysical location of the memory in which the data is to be stored (suchas a numerical address representative of the physical location, etc.).The data can then be written to the memory at the physical address ofthe write operation. At operation 520, the processing logic records thephysical address in a write transaction catalog. The write transactioncatalog can be a memory buffer that records each of the physicaladdresses written in memory. In one embodiment, the write transactioncatalog is a first-in first-out memory buffer that records the physicaladdresses of incoming write operations and removes the oldest physicaladdress in the buffer each time a new address is recorded. Each physicaladdress can be recorded with a time stamp for the time when the writeoperation occurred. In another embodiment, a write pointer of the writetransaction catalog increments to a next entry position each time aspecific time interval elapses. The specific time interval can be aminimum write interval (i.e., the shortest amount of time a single writetransaction can occur).

At operation 530, the processing logic receives a request to perform aread operation on the memory at the physical address. The read operationcan include the physical address of the memory to be read. The physicaladdress can be received at a read voltage selection component todetermine a read voltage to use to read the data at the physicaladdress. At operation 540, the processing logic determines whether thephysical address is stored in a write transaction catalog. A searchengine implemented in hardware (e.g., a hash, or content addressablememory) can be used to search the recent write transaction for an entrywith the physical address.

At operation 550, the processing logic reads the memory at the physicaladdress using a first read voltage level in response to determining thatthe physical address is stored in the write transaction catalog and asecond read voltage level can be used if the physical address is notstored in the write transaction catalog. The first read voltage levelcan be a lowest read voltage level of multiple read voltage levels. Forexample, there can be a first read voltage level (lowest), a second readvoltage level (middle), and a third read voltage level (highest). Thedifferent read voltage levels can be used for data that has differentW2R delays. The first read voltage level can be used to read data withina first range of W2R delays. The second read voltage level can be usedto read data within a second range of W2R delays. The third read voltagelevel can be used to read data within a third range of W2R delays. Inanother example, if the W2R delay exceeds a threshold (e.g., is withinthe second or third ranges) then the second read voltage level can beused to attempt to read the data. If a read error occurs when using thesecond read voltage level then the third read voltage level can be usedto read the data. At operation 560, the processing logic removes thephysical address from the write transaction catalog when a W2R delay ofthe data at the physical address exceeds a threshold W2R delay.

FIG. 6A illustrates an example write transaction catalog for use inselecting a read voltage level, according to one embodiment. The writetransaction catalog can store one or more physical addresses 600A-N ofmemory on which a write operation has been performed. In one example,when a write operation is received and/or performed a time stamp isrecorded along with the physical address that the write operation is tobe performed on. For example, physical address 600A can be recordedalong with time stamp 600B when a write operation to be performed onphysical address 600A is received and/or performed.

In one embodiment, the write catalog is a first-in first-out buffer. Awrite pointer for the buffer can be used to select the entry of thebuffer in which to record a physical address and timestamp of a writeoperation. The write pointer can be incremented each time a writeoperation is received. Thus, the write transaction catalog can recordphysical addresses of write operations adjacently as they are received.For example, upon receiving a first write operation, the physicaladdress 600A and time stamp 600B can be recorded. Next, a second writeoperation can be received and the physical address 602A and 602B can berecorded adjacent to physical address 600A and 600B regardless of howmuch time has elapsed between the write operations. A third writeoperation can be received and physical address 604A and time stamp 604Bcan be recorded adjacent to the physical address 602A and timestamp 602Bof the previous write operation.

In addition, upon receiving a read operation the write transactioncatalog can be searched to determine if the physical address to be readis recorded therein. If the physical address is found in the writetransaction catalog then the timestamp recorded with the physicaladdress is used to determine if a W2R delay of the physical address islarger than a defined threshold. If the W2R delay is less than thedefined threshold then a first read voltage level can be used to readthe data at the physical address in memory. If the W2R delay is largerthan the defined threshold then a second read voltage level can be usedto read the data at the physical address in memory. The second readvoltage can be higher than the first read voltage. Additionally, if thephysical address is not in the write transaction catalog then the secondread voltage level can be used.

FIG. 6B depicts an example write transaction catalog according to oneembodiment. A write pointer can be used to select which entry of thewrite transaction catalog that a received physical address is recordedin. The write pointer can be incremented to the next entry position atthe same rate as a maximum write rate of the memory sub-system, or inother words every time a minimum write interval elapsed. The minimumwrite interval can be the smallest period of time over which a writeoperation can occur. At each minimum write interval, if a writeoperation is received then the physical address of the write operationis recorded in the write transaction catalog according to the positionof the write pointer at that time. The write pointer can continue toincrement at every minimum write interval even if a write operation isnot received.

Since the write pointer increments at every minimum write interval, thesize of the write transaction catalog can be determined by the thresholdW2R interval and vice versa. The threshold W2R interval divided by theminimum write interval can provide the number of possible entries in thewrite transaction catalog. Thus, in one embodiment, when a readoperation is received, the write transaction catalog can be searched fora physical address from the read operation. If the physical address isin the write transaction catalog then the W2R delay of the physicaladdress is less than the threshold W2R interval. Therefore, a first readvoltage level can be used to read the data at the physical address.Otherwise, if the physical address is not found in the write transactioncatalog then the W2R delay is larger than the threshold W2R interval. Ifthe W2R delay is larger than the threshold W2R interval, then a secondread voltage level can be used to read the data at the physical address.

For example, a write pointer can begin by pointing to the position inthe write transaction catalog corresponding to catalog entry 610. Atthat time a write operation is not received and therefore it remainsempty. Once the minimum write interval elapses, the write pointerincrements to the position corresponding to physical address 612 atwhich point a write operation is received. The physical address of thewrite operation can then be recorded at catalog entry 612. After anotherminimum write interval has elapsed the write pointer increments again tocatalog entry 614. The same process continues until the write pointerreaches the end of the catalog (e.g., catalog entry N). Then the writepointer goes back to the beginning of the write transaction catalog atcatalog entry 610. Using this method the threshold W2R interval can bedefined by the number of entries in the write transaction catalog.Therefore, if a physical address is in the write transaction catalog thedata at the physical address was written to within the threshold W2Rinterval.

FIG. 7 illustrates an example machine of a computer system 700 withinwhich a set of instructions, for causing the machine to perform any oneor more of the methodologies discussed herein, can be executed. In someembodiments, the computer system 700 can correspond to a host system(e.g., the host system 120 of FIG. 1) that includes, is coupled to, orutilizes a memory sub-system (e.g., the memory sub-system 110 of FIG. 1)or can be used to perform the operations of a controller (e.g., toexecute an operating system to perform operations corresponding to theread voltage selection component 113 of FIG. 1). In alternativeembodiments, the machine can be connected (e.g., networked) to othermachines in a LAN, an intranet, an extranet, and/or the Internet. Themachine can operate in the capacity of a server or a client machine inclient-server network environment, as a peer machine in a peer-to-peer(or distributed) network environment, or as a server or a client machinein a cloud computing infrastructure or environment.

The machine can be a personal computer (PC), a tablet PC, a set-top box(STB), a Personal Digital Assistant (PDA), a cellular telephone, a webappliance, a server, a network router, a switch or bridge, or anymachine capable of executing a set of instructions (sequential orotherwise) that specify actions to be taken by that machine. Further,while a single machine is illustrated, the term “machine” shall also betaken to include any collection of machines that individually or jointlyexecute a set (or multiple sets) of instructions to perform any one ormore of the methodologies discussed herein.

The example computer system 700 includes a processing device 702, a mainmemory 704 (e.g., read-only memory (ROM), flash memory, dynamic randomaccess memory (DRAM) such as synchronous DRAM (SDRAM) or Rambus DRAM(RDRAM), etc.), a static memory 706 (e.g., flash memory, static randomaccess memory (SRAM), etc.), and a data storage system 718, whichcommunicate with each other via a bus 730.

Processing device 702 represents one or more general-purpose processingdevices such as a microprocessor, a central processing unit, or thelike. More particularly, the processing device can be a complexinstruction set computing (CISC) microprocessor, reduced instruction setcomputing (RISC) microprocessor, very long instruction word (VLIW)microprocessor, or a processor implementing other instruction sets, orprocessors implementing a combination of instruction sets. Processingdevice 702 can also be one or more special-purpose processing devicessuch as an application specific integrated circuit (ASIC), a fieldprogrammable gate array (FPGA), a digital signal processor (DSP),network processor, or the like. The processing device 702 is configuredto execute instructions 726 for performing the operations and stepsdiscussed herein. The computer system 700 can further include a networkinterface device 708 to communicate over the network 720.

The data storage system 718 can include a machine-readable storagemedium 724 (also known as a computer-readable medium) on which is storedone or more sets of instructions 726 or software embodying any one ormore of the methodologies or functions described herein. Theinstructions 726 can also reside, completely or at least partially,within the main memory 704 and/or within the processing device 702during execution thereof by the computer system 700, the main memory 704and the processing device 702 also constituting machine-readable storagemedia. The machine-readable storage medium 724, data storage system 718,and/or main memory 704 can correspond to the memory sub-system 110 ofFIG. 1.

In one embodiment, the instructions 726 include instructions toimplement functionality corresponding to a read voltage selectioncomponent (e.g., the read voltage selection component 113 of FIG. 1).While the machine-readable storage medium 724 is shown in an exampleembodiment to be a single medium, the term “machine-readable storagemedium” should be taken to include a single medium or multiple mediathat store the one or more sets of instructions. The term“machine-readable storage medium” shall also be taken to include anymedium that is capable of storing or encoding a set of instructions forexecution by the machine and that cause the machine to perform any oneor more of the methodologies of the present disclosure. The term“machine-readable storage medium” shall accordingly be taken to include,but not be limited to, solid-state memories, optical media, and magneticmedia.

Some portions of the preceding detailed descriptions have been presentedin terms of algorithms and symbolic representations of operations ondata bits within a computer memory. These algorithmic descriptions andrepresentations are the ways used by those skilled in the dataprocessing arts to most effectively convey the substance of their workto others skilled in the art. An algorithm is here, and generally,conceived to be a self-consistent sequence of operations leading to adesired result. The operations are those requiring physicalmanipulations of physical quantities. Usually, though not necessarily,these quantities take the form of electrical or magnetic signals capableof being stored, combined, compared, and otherwise manipulated. It hasproven convenient at times, principally for reasons of common usage, torefer to these signals as bits, values, elements, symbols, characters,terms, numbers, or the like.

It should be borne in mind, however, that all of these and similar termsare to be associated with the appropriate physical quantities and aremerely convenient labels applied to these quantities. The presentdisclosure can refer to the action and processes of a computer system,or similar electronic computing device, that manipulates and transformsdata represented as physical (electronic) quantities within the computersystem's registers and memories into other data similarly represented asphysical quantities within the computer system memories or registers orother such information storage systems.

The present disclosure also relates to an apparatus for performing theoperations herein. This apparatus can be specially constructed for theintended purposes, or it can include a general purpose computerselectively activated or reconfigured by a computer program stored inthe computer. Such a computer program can be stored in a computerreadable storage medium, such as, but not limited to, any type of diskincluding floppy disks, optical disks, CD-ROMs, and magnetic-opticaldisks, read-only memories (ROMs), random access memories (RAMs), EPROMs,EEPROMs, magnetic or optical cards, or any type of media suitable forstoring electronic instructions, each coupled to a computer system bus.

The algorithms and displays presented herein are not inherently relatedto any particular computer or other apparatus. Various general purposesystems can be used with programs in accordance with the teachingsherein, or it can prove convenient to construct a more specializedapparatus to perform the method. The structure for a variety of thesesystems will appear as set forth in the description below. In addition,the present disclosure is not described with reference to any particularprogramming language. It will be appreciated that a variety ofprogramming languages can be used to implement the teachings of thedisclosure as described herein.

The present disclosure can be provided as a computer program product, orsoftware, that can include a machine-readable medium having storedthereon instructions, which can be used to program a computer system (orother electronic devices) to perform a process according to the presentdisclosure. A machine-readable medium includes any mechanism for storinginformation in a form readable by a machine (e.g., a computer). In someembodiments, a machine-readable (e.g., computer-readable) mediumincludes a machine (e.g., a computer) readable storage medium such as aread only memory (“ROM”), random access memory (“RAM”), magnetic diskstorage media, optical storage media, flash memory components, etc.

In the foregoing specification, embodiments of the disclosure have beendescribed with reference to specific example embodiments thereof. Itwill be evident that various modifications can be made thereto withoutdeparting from the broader spirit and scope of embodiments of thedisclosure as set forth in the following claims. The specification anddrawings are, accordingly, to be regarded in an illustrative senserather than a restrictive sense.

What is claimed is:
 1. A system comprising: a memory component; and a processing device, operatively coupled with the memory component, to perform operations comprising: receiving a read request on data stored at a physical address of the memory component; determining whether an indicator of the physical address is stored in a write transaction catalog; reading the data stored at the physical address using a first read voltage level in response to determining that the physical address is stored in the write transaction catalog; reading the data stored at the physical address using a second read voltage level in response to determining that the physical address is not stored in the write transaction catalog, wherein the second read voltage level is higher than the first read voltage level; and reading the data stored at the physical address using a third read voltage level in response to determining that the physical address is not stored in the write transaction catalog and that a read error occurred in response to reading the data stored at the physical address using a second read voltage level, wherein the third read voltage level is higher than the second read voltage level.
 2. The system of claim 1, wherein the processing device is to perform further operations comprising: searching the write transaction catalog for an entry corresponding to the physical address; and determining whether a time stamp associated with the entry corresponding to the physical address in the write transaction catalog indicates that the data stored at the physical address satisfies a threshold criterion.
 3. The system of claim 2, wherein to determine whether the time stamp indicates that the data stored at the physical address satisfies the threshold criterion, the processing device is to perform further operations comprising: determining a difference between a current time and the time stamp, wherein the difference represents a write to read delay of the data stored at the physical address; and comparing the difference to a threshold.
 4. The system of claim 1, wherein the write transaction catalog stores a plurality of entries corresponding to a plurality of physical addresses of memory that satisfy a threshold criterion.
 5. The system of claim 4, wherein the processing device is to perform further operations comprising: recording the physical address in the write transaction catalog upon performing a write operation to write the data to the physical address; and removing the physical address from the write transaction catalog after a threshold criterion is not satisfied.
 6. The system of claim 5, wherein a write pointer determines which entry of the write transaction catalog to use to record the physical address, and wherein the write pointer is updated to point to a subsequent entry of the write transaction catalog after a specified period of time.
 7. The system of claim 6, wherein the write pointer is updated after the specified period of time independent of whether another write operation is received during the specified period of time.
 8. A method comprising: performing a write operation on data stored at a physical address of a memory component; recording an indicator of the physical address in a write transaction catalog; receiving a request to perform a read operation on the data stored at the physical address; determining whether the indicator of the physical address is stored in the write transaction catalog; reading the data stored at the physical address using a first read voltage level in response to determining that the physical address is stored in the write transaction catalog; reading the data stored at the physical address using a second read voltage level in response to determining that the physical address is not stored in the write transaction catalog, wherein the second read voltage level is higher than the first read voltage level; and reading the data stored at the physical address using a third read voltage level in response to determining that the physical address is not stored in the write transaction catalog and that a read error occurred in response to reading the data stored at the physical address using a second read voltage level, wherein the third read voltage level is higher than the second read voltage level.
 9. The method of claim 8, further comprising: determining that the data does not satisfy a threshold criterion pertaining to when the data was written to the physical address; and removing the physical address from the write transaction catalog.
 10. The method of claim 8, wherein determining whether the physical address is stored in the write transaction catalog comprises: searching the write transaction catalog using a hardware hashing scheme or content addressable memory.
 11. The method of claim 8, wherein the write transaction catalog comprises a first in first out memory buffer and wherein an oldest entry of the write transaction catalog is removed when a minimum write interval elapses.
 12. The method of claim 11, wherein at the minimum write interval a new physical address is recorded in the write transaction catalog if a new write operation is received.
 13. The method of claim 8, wherein a timestamp is recorded with the physical address when the write operation is executed, wherein the timestamp is used to determine whether a threshold criterion pertaining to when the data was written to the physical address is satisfied.
 14. A non-transitory computer readable storage medium comprising instructions that, when executed by a processing device, cause the processing device to: receiving a read request on data stored at a physical address of the memory component; determining whether an indicator of the physical address is stored in a write transaction catalog; reading the data stored at the physical address using a first read voltage level in response to determining that the physical address is stored in the write transaction catalog; reading the data stored at the physical address using a second read voltage level in response to determining that the physical address is not stored in the write transaction catalog, wherein the second read voltage level is higher than the first read voltage level; and reading the data stored at the physical address using a third read voltage level in response to determining that the physical address is not stored in the write transaction catalog and that a read error occurred in response to reading the data stored at the physical address using a second read voltage level, wherein the third read voltage level is higher than the second read voltage level.
 15. The non-transitory computer readable storage medium of claim 14, wherein the processing device is to perform further operations comprising: searching the write transaction catalog for an entry corresponding to the physical address using content addressable memory; and determining whether a time stamp associated with the entry corresponding to the physical address in the write transaction catalog indicates that the data stored at the physical address satisfies a threshold criterion.
 16. The non-transitory computer readable storage medium of claim 15, wherein to determine whether the time stamp indicates that the data stored at the physical address satisfies the threshold criterion, the processing device is to perform further operations comprising: determining a difference between a current time and the time stamp, wherein the difference represents a write to read delay of the data stored at the physical address; and comparing the difference to the threshold criterion.
 17. The non-transitory computer readable storage medium of claim 14, wherein the write transaction catalog stores a plurality of entries corresponding to a plurality of physical addresses of memory that satisfy a threshold criterion.
 18. The non-transitory computer readable storage medium of claim 14, wherein the processing device is to perform further operations comprising: recording the physical address in the write transaction catalog upon performing a write operation to write the data to the physical address; and removing the physical address from the write catalog after a threshold criterion is exceeded.
 19. The non-transitory computer readable storage medium of claim 18, wherein a write pointer determines in which entry of the write transaction catalog the physical address will be recorded, and wherein the write pointer is updated to point to a subsequent entry of the write transaction catalog after a specified period of time. 